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19 July 2000 Dose latitude dependency on resist contrast in e-beam mask lithography
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392058
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
In mask-making process with e-beam lithography, the process capability is usually affected by exposure profile, resist contrast and development process. Dose latitude depends significantly on these three parameters. In this work, dose latitude between different resist contrasts has been experimentally studied as a function of linewidth, dose, beam size and over development magnitude using commercial PBS and ZEP 7000 resist on a photomask with 10 keV exposure. It has been found that ZEP 7000 resist with high contrast shows lower dose latitude, more sensitivity to the variation of linewidth, dose and beam size except for over development magnitude due to its relatively longer development time.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Byung-Cheol Cha, Seong-Yong Moon, Won-Tai Ki, Seung-Hune Yang, Seong-Woon Choi, Woo-Sung Han, Hee-Sun Yoon, and Jung-Min Sohn "Dose latitude dependency on resist contrast in e-beam mask lithography", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392058
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