19 July 2000 EUV mask absorber characterization and selection
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392025
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
In this paper, we will present our research work in EUVL mask absorber characterization and selection. The EUV mask patterning process development depends on the choice of EUVL mask absorber material, which has direct impact on the mask quality such as critical dimension (CD) control, and registration. EUVL mask absorber material selection consideration involves many aspects of material properties and processes. These include film absorption at EUV wavelength, film emissivity, film stress, mask CD and defect control, defect inspection contrast, absorber repair selectivity to the buffer layer, etc. The selection of the best candidate is non-trivial since no material is found to be superior in all aspects. In an effort of searching the best absorber materials and processes, we evaluated Al-Cu, Ti, TiN, Ta, TaN, and Cr absorbers. The comparison of material intrinsic properties and process properties allowed us to focus on the most promising absorbers and to further develop the corresponding processes to meet EUVL requirement.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pei-yang Yan, Pei-yang Yan, Guojing Zhang, Guojing Zhang, Patrick Kofron, Patrick Kofron, Jeffrey E. Powers, Jeffrey E. Powers, Mark Tran, Mark Tran, Ted Liang, Ted Liang, Alan R. Stivers, Alan R. Stivers, Fu-Chang Lo, Fu-Chang Lo, } "EUV mask absorber characterization and selection", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392025; https://doi.org/10.1117/12.392025
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