19 July 2000 Evaluation of loading effect of NLD dry etching
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392060
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Recently, loading effect is becoming a great issue in mask dry etching process. It is well known that the effect is affected by pattern density. To improve the issue, an advanced mask dry etching system using neutral loop discharge was applied for next generation mask fabrication, because the tool make is possible to get high plasma density and low gas pressure.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takayuki Iwamatsu, Takayuki Iwamatsu, Tatsuya Fujisawa, Tatsuya Fujisawa, Koji Hiruta, Koji Hiruta, Hiroaki Morimoto, Hiroaki Morimoto, Noriyuki Harashima, Noriyuki Harashima, Takaei Sasaki, Takaei Sasaki, Mutsumi Hara, Mutsumi Hara, Kazuhide Yamashiro, Kazuhide Yamashiro, Yasushi Okubo, Yasushi Okubo, Yoichi Takehana, Yoichi Takehana, } "Evaluation of loading effect of NLD dry etching", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392060; https://doi.org/10.1117/12.392060

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