19 July 2000 Evaluation of loading effect of NLD dry etching
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392060
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
Recently, loading effect is becoming a great issue in mask dry etching process. It is well known that the effect is affected by pattern density. To improve the issue, an advanced mask dry etching system using neutral loop discharge was applied for next generation mask fabrication, because the tool make is possible to get high plasma density and low gas pressure.
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Takayuki Iwamatsu, Tatsuya Fujisawa, Koji Hiruta, Hiroaki Morimoto, Noriyuki Harashima, Takaei Sasaki, Mutsumi Hara, Kazuhide Yamashiro, Yasushi Okubo, Yoichi Takehana, "Evaluation of loading effect of NLD dry etching", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392060; https://doi.org/10.1117/12.392060
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