19 July 2000 High-contrast i-line positive photoresist for laser reticle writer
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392066
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
Lately laser writing tools have been dominated for producing leading-edge reticles. In addition, high resolution resist adjusted to the writing tool is strongly required to enhance the mask-making process capability. Here we have developed an i-line positive photoresist named 'THMR M100'. The most significant feature of the resists is higher contrast that can bring us high-resolution patterns as well as better CD accuracy. We realized 0.4 micron or less patterns were able to be formed with its high-contrast process in combination with ALTA tool. In fact the separate resolution was 0.3 micron. Furthermore, almost vertical side-wall angle of the developed resist was also achieved. We will deliver the excellent performance for fabricating the high-end reticles that this newly developed resist indicated.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshihito Kobayashi, Y. Oppata, Y. Ezoe, Fumiaki Shigemitsu, K. Urayama, K. Doi, "High-contrast i-line positive photoresist for laser reticle writer", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392066; https://doi.org/10.1117/12.392066
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