19 July 2000 High-contrast i-line positive photoresist for laser reticle writer
Author Affiliations +
Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392066
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Lately laser writing tools have been dominated for producing leading-edge reticles. In addition, high resolution resist adjusted to the writing tool is strongly required to enhance the mask-making process capability. Here we have developed an i-line positive photoresist named 'THMR M100'. The most significant feature of the resists is higher contrast that can bring us high-resolution patterns as well as better CD accuracy. We realized 0.4 micron or less patterns were able to be formed with its high-contrast process in combination with ALTA tool. In fact the separate resolution was 0.3 micron. Furthermore, almost vertical side-wall angle of the developed resist was also achieved. We will deliver the excellent performance for fabricating the high-end reticles that this newly developed resist indicated.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshihito Kobayashi, Yoshihito Kobayashi, Y. Oppata, Y. Oppata, Y. Ezoe, Y. Ezoe, Fumiaki Shigemitsu, Fumiaki Shigemitsu, K. Urayama, K. Urayama, K. Doi, K. Doi, "High-contrast i-line positive photoresist for laser reticle writer", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392066; https://doi.org/10.1117/12.392066


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