Impact of pattern proximity correction on die-to-database mask inspection

Anja Rosenbusch; Vicky Bailey; Yair Eran; Reuven Falah; Shirley Hamar; Neil J. Holmes; Andrew C. Hourd; Hartmut Kirsch; Andrew McArthur

doi:10.1117/12.392071

19 July 2000 Impact of pattern proximity correction on die-to-database mask inspection

Anja Rosenbusch, Vicky Bailey, Yair Eran, Reuven Falah, Shirley Hamar, Neil J. Holmes, Andrew C. Hourd, Hartmut Kirsch, Andrew McArthur

Author Affiliations +

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392071
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

While the semiconductor industry is following a very aggressive roadmap without a corresponding reduction in exposure wavelength, the role of resolution enhancement techniques like PSM and OPC is becoming more and more important. Mask making for these advanced techniques is one of the most crucial parts in making these techniques work. Mask inspection is one of the major challenges in the mask making process, as it is one of the most performance critical steps in the entire mask making process. Especially contact or OPC patterns show difficulties in die-to-database inspection as the CAD data asks for square corners. LPC is a mask enhancement technique improving image quality and CD linearity for laser pattern generators. The paper present the impact of Laser Proximity Correction on contact and line patterns of 0.18 micrometers generation. The LBM is used to characterize Cd uniformity improvement of the entire plate.

Citation Download Citation

Anja Rosenbusch, Vicky Bailey, Yair Eran, Reuven Falah, Shirley Hamar, Neil J. Holmes, Andrew C. Hourd, Hartmut Kirsch, and Andrew McArthur "Impact of pattern proximity correction on die-to-database mask inspection", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392071

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