19 July 2000 Improvement of defect density for DUV halftone PSM
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392039
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
As the required minimum feature size is rapidly down to sub- micron at photomask, the fabrication of alternate lithography techniques to extend and prolong current technology becomes critical important. So recently MoSi PSM are being applied in semiconductor lithography, primarily for high density layers such as found in memory chips. The increasing use of MoSi based attenuated phase shift masks necessitates defect reducing on the MoSi phase shift mask reticles. In this paper, in order to reduce the defect on the phase shift mask reticles, we will discuss the results of several experiments, utilizing CHF3/)2 gas mixture and SF6/He gas mixture chemistries and various process sequences. This paper reports the results of defect reducing for MoSi attenuated phase shifting masks using an inductively coupled plasma system.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyu-Yong Lee, Kyu-Yong Lee, Lee-Ju Kim, Lee-Ju Kim, Kyeong-Mee Yeon, Kyeong-Mee Yeon, Sang Woon Lee, Sang Woon Lee, Hong-Seok Kim, Hong-Seok Kim, "Improvement of defect density for DUV halftone PSM", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392039; https://doi.org/10.1117/12.392039

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