19 July 2000 Improvement of the resolution and accuracy of chemical-amplification positive resist for 0.13-μm reticle fabrication
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392065
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
We have developed a novolak-based chemical-amplification resist for 0.13-micrometers or later reticle fabrication. For the 0.13-micrometers or later design-rule reticle-fabrication with OPC patterns, the resist resolution is required under 0.2-micrometers on the mask substrate. To improve the chemical-amplification resist resolution, it is necessary to control the acid- diffusion in the resist film. We have developed the technique of the acid-diffusion control with neutral-salt additives. By use of the resist with this technique, we could fabricate 0.14-micrometers 1/s patterns on a CrOx substrate at a dose of 9.3-(mu) C/cm2. The resist has a good margin of doses.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadashi Arai, Tadashi Arai, Toshio Sakamizu, Toshio Sakamizu, Kei Kasuya, Kei Kasuya, Kohji Katoh, Kohji Katoh, Takashi Soga, Takashi Soga, Hidetaka Saitoh, Hidetaka Saitoh, Hiroshi Shiraishi, Hiroshi Shiraishi, Morihisa Hoga, Morihisa Hoga, } "Improvement of the resolution and accuracy of chemical-amplification positive resist for 0.13-μm reticle fabrication", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392065; https://doi.org/10.1117/12.392065
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