19 July 2000 Next-generation lithography mask development at the NGL-MCOC
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392049
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
Masks for next generation lithographies present difficult technical processing, challenges for meeting the demanding requirements of future lithography. The Next Generation Lithography Mask Center of Competency is applying the proximity x-ray mask technology developed by the IBM advanced mask facility to all major NGL technologies. Mask fabrication has been demonstrated for proximity x-ray, scattering and stencil electron beam projection, and extreme UV lithographies. The imaging layer for these mask technologies differ significantly from one another and yet present similar processing challenges. This paper discuses the process technology developed at the NGL-MCOC associated with patterning the absorber layers. Issues with chemically amplified resist coating and baking and absorber etching are identified and associated with observed image size variations. The difficulty in the aspect ratio of. the absorber drives much of the processing requirements for the different NGL formats. High-aspect ratios on stencil and proximity x-ray masks require more difficult etch processes than those on lower-aspect ratio absorbers.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael J. Lercel, Michael J. Lercel, Kenneth C. Racette, Kenneth C. Racette, Christopher Magg, Christopher Magg, Mark Lawliss, Mark Lawliss, Kevin W. Collins, Kevin W. Collins, Monica Barrett, Monica Barrett, Michael J. Trybendis, Michael J. Trybendis, Lucien Bouchard, Lucien Bouchard, } "Next-generation lithography mask development at the NGL-MCOC", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392049; https://doi.org/10.1117/12.392049
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