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19 July 2000 Pattern shape analysis tool for defect judgement of photomask
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000)
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
It has been used to measure the maximum length of defect size for the defect decision method at the reticle inspection review. But since 0.25-0.18 micrometers node, we need to have another method to measure and judge the defect because of the complicated pattern line OPC shape and defects which could not decide to be acceptable or not for sensitive defect printability. The best way to know the effect of defects is to print on wafer or to use special review tool so called optical lithography simulation microscope like AIMS in order to judge these defects. But AIMS requires optical parameter of the wafer exposure machine. And its operation takes much time. And most of the detected defects can be judged at the photomask inspection process. We propose new judgement method for defect review precisely and easily. We have developed pattern shape analysis tool that makes defect shape of inspection review image some contact hole pattern example measured by its area and intensity values or another image acquisition system like SEM some quantitative expression. This method is useful for measuring the defect on a complicated pattern like OPC, corner rounding or edge roughness as pattern quality, or area size of a contact hole. Moreover, this method does not remain at the measurement with 2D pattern and can take the total quality of the light as the flux as well. We measured the shape of the mask pattern and the defect quantitatively using this method and evaluated print possibility about the defect print step.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fuyuhiko Matsuo, Masao Otaki, Norihito Fukugami, Isao Yonekura, and Yuhichi Fukushima "Pattern shape analysis tool for defect judgement of photomask", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000);

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