19 July 2000 Practical phase control technique for alternating phase-shift mask fabrication
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392040
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
Techniques of fabricating altPSMs of single trench structure by quartz etching have been developed. A two-step etching process was adopted to make the side-etching structure. Shifter areas were etched by dry-method in first step and by wet-method in second step. In the experiments, by a RIE type dry-etching machine, a hydrofluoric (HF) acid etching system, a phase measurement system and 6025-mask plate were used. We optimized dry-etching parameter, such as pressure, RF power and composition of gas mixture ratio. The smallest phase difference between the device-pattern and the monitor- pattern was obtained in smallest phase difference between the device-pattern and the monitor-pattern was obtained in low pressure wit inactive gas. The dry etching uniformity was improved and range value was reduced from 2.7 degrees to 1.1 degrees by using type B of the plate holder. In wet etching process, two modes of movement and two concentration of buffered HF acid were compared from the viewpoint of etching uniformity. The uniformity was reduced to two third of the benchmark condition. For AltPSMs production quality, phase mean deviation is within +/- 2 degrees and uniformities are within 2.5 degrees. The technique described in this study can be applied to 150 nm node altPSMs fabrication and shows an extensibility to 130 nm node.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiko Takahashi, Masahiko Takahashi, Akihiro Miyake, Akihiro Miyake, Hidetaka Saitou, Hidetaka Saitou, Hiroyuki Miyashita, Hiroyuki Miyashita, Shiaki M. Murai, Shiaki M. Murai, } "Practical phase control technique for alternating phase-shift mask fabrication", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392040; https://doi.org/10.1117/12.392040
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