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19 July 2000 Process scheme for removing buffer layer on multilayer for EUVL mask
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392050
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
In the fabrication of masks for EUVL, a combination of dry and wet etching was used to remove the SiO2 buffer layer. This technique greatly improves the pattern quality, yielding re-entrant shaped mask patterns with a steep SiO2 sidewall. Under proper conditions, etching results in the base of the sidewall being recessed around 5 nm from the edge of the Ta pattern. The strength of hydrofluoric acid (HF) solution was set to 3.3 percent to allow good control of the etching rate. A combination of dry and wet etching is an effective way to remove the SiO2 buffer layer because it can compensate for a variation of as much as 7.6 percent in the thickness of the SiO2 film before etching.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eiichi Hoshino, Taro Ogawa, Masashi Takahashi, Hiromasa Hoko, Hiromasa Yamanashi, Naoya Hirano, Akira Chiba, Masaaki Ito, and Shinji Okazaki "Process scheme for removing buffer layer on multilayer for EUVL mask", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392050
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