19 July 2000 Proximity effect correction for reticle fabrication
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392056
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
As the LSI pattern density increases, the minimum feature size on reticle decreases and the required dimensional accuracy becomes more severe. To write patterns for 130nm- node device, the proximity effect correction is essential for electron beam mask writing system to obtain enough CD accuracy. We optimized the proximity effect correction parameters in EB mask writer, and the evaluated results are presented.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masao Sugiyama, Masao Sugiyama, Shinji Kubo, Shinji Kubo, Koji Hiruta, Koji Hiruta, Takayuki Iwamatsu, Takayuki Iwamatsu, Tatsuya Fujisawa, Tatsuya Fujisawa, Hiroaki Morimoto, Hiroaki Morimoto, } "Proximity effect correction for reticle fabrication", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392056; https://doi.org/10.1117/12.392056

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