19 July 2000 Reticle defect sizing of optical proximity correction defects using SEM imaging and image analysis techniques
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392037
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
Sizing of programmed defects on optical proximity correction (OPC) feature sis addressed using high resolution scanning electron microscope (SEM) images and image analysis techniques. A comparison and analysis of different sizing methods is made. This paper addresses the issues of OPC defect definition and discusses the experimental measurement results obtained by SEM in combination with image analysis techniques.
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Larry S. Zurbrick, Larry S. Zurbrick, Lantian Wang, Lantian Wang, Paul Konicek, Paul Konicek, Ellen R. Laird, Ellen R. Laird, } "Reticle defect sizing of optical proximity correction defects using SEM imaging and image analysis techniques", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392037; https://doi.org/10.1117/12.392037
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