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23 February 2000 High-performance 980-nm emission wavelength InGaAs/AlGaAs/GaAs laser diodes
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Proceedings Volume 4068, SIOEL '99: Sixth Symposium on Optoelectronics; (2000) https://doi.org/10.1117/12.378687
Event: SIOEL: Sixth Symposium of Optoelectronics, 1999, Bucharest, Romania
Abstract
This paper present the fabrication and mirrors passivation process of InGaAs/AlGaAs/GaAs narrow stripe 980 nm emission wavelength laser diodes. After mesa-stripe definition and Au-contact deposition procedures, a procedure of in-vacuum cleaving and in-situ passivation with (lambda) /2-thick ZnSe layers was performed. 960 micrometers and 500 micrometers length laser diodes bars was fabricated as a result. Antireflection-high reflectivity coating were formed on the bars facets. Laser diodes were soldered p-junction-side down on copper submounts. The room temperature CW threshold current value of 20 mA and CW maximum output power of 440 mW at 760 mA pumping current were obtained. The far-field emission pattern of laser diodes is lateral single mode in large range of output powers. These laser diodes were used for laser diode module fabrication. In this module the laser diodes was coupled with tapered single mode 9 micrometers /125 micrometers optical fiber with a fused microlens at the end. CW output optical power of 40 mW from the fiber was obtained at 240 mA operating current of the laser diode module.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grigore I. Suruceanu, Andrei N. Caliman, Stanislav T. Vieru, V. P. Iakovlev, A. V. Sarbu, and Alexandru Z. Mereuta "High-performance 980-nm emission wavelength InGaAs/AlGaAs/GaAs laser diodes", Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); https://doi.org/10.1117/12.378687
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