23 February 2000 InGaAsP/AlGaAs multiple-wavelength vertical-cavity lasers and arrays in the 1.5-μm band fabricated by localized wafer fusion technique
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Proceedings Volume 4068, SIOEL '99: Sixth Symposium on Optoelectronics; (2000) https://doi.org/10.1117/12.378630
Event: SIOEL: Sixth Symposium of Optoelectronics, 1999, Bucharest, Romania
Abstract
We have demonstrated InGaAsP/AlGaAs double fused 1.5 micrometers multiple wavelength vertical cavity lasers and arrays in which element definition is obtained by localized fusion. Laser elements emit in continuous wave under electrical and optical pumping. Multiple wavelength single element VCSELs have been fabricated in the same batch taking advantage of layer thickness nonuniformity of InGaAsP/InP material close to the edge of the wafer. To obtain multiple wavelength arrays a controllable cavity length variation using anodic oxidation has been performed. The wavelength span in an 8 by 1 laser array is 10 nm. Single mode operation with more than of 40 dB side mode suppression ratio is characteristic for laser elements in the array.
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Alexei V. Syrbu, Vladimir P. Iakovlev, Alok P. Rudra, Claude-Albert Berseth, Eli E. Kapon, Alexandru Z. Mereuta, Isabelle Sagnes, Abdallah Ougazzaden, "InGaAsP/AlGaAs multiple-wavelength vertical-cavity lasers and arrays in the 1.5-μm band fabricated by localized wafer fusion technique", Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); doi: 10.1117/12.378630; https://doi.org/10.1117/12.378630
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