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23 February 2000 Influence of the precrystallization zone on the dopant field in microgravity
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Proceedings Volume 4068, SIOEL '99: Sixth Symposium on Optoelectronics; (2000)
Event: SIOEL: Sixth Symposium of Optoelectronics, 1999, Bucharest, Romania
In this paper we present the computed dopant field in the neighborhood of the melt/solid interface in the case of Bridgman-Stockbarger semiconductor crystal growth system in microgravity. The computation is made in quasi-steady state approximation for crystal and melt with thermophysical properties similar to those of gallium-doped germanium, using the 'precrystallization-zone' model. In the quasi- steady state approximation the translation of the ampoule is replaced by supplying melt into the ampoule with velocity V1 and removing crystal at the other end of the ampoule at the rate Vs equals V1. The 'precrystallization-zone' is considered to be a thin layer masking the crystal in which exists a periodical microstructure created by the periodical structure of the crystal which governs the arranging of the own atoms into a specific crystalline lattice. In fact, in this layer we have periodically distributed places which are not available for the dopant. Using this approximation and model, we find relevant radial segregation due to the precrystallization-zone. We also find that reducing the diameter of the rod a lower radial segregation appears. Therefore the influence of the precrystallization-zone is relevant even in microgravity and there is no reason to ignore this zone in general.
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Agneta M. Balint, Diana G. Baltean, Monica Mihailovici, Adrian Neculae, and Stefan Balint "Influence of the precrystallization zone on the dopant field in microgravity", Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000);

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