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23 February 2000 MQW laser dynamic behavior analysis based on small signal modulation regime simulation
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Proceedings Volume 4068, SIOEL '99: Sixth Symposium on Optoelectronics; (2000) https://doi.org/10.1117/12.378732
Event: SIOEL: Sixth Symposium of Optoelectronics, 1999, Bucharest, Romania
Abstract
A comprehensive analysis of the small-signal direct modulation response, based on quantum well (QW) laser rate equations model is presented. This theoretical model is first analytically analyze din order to estimate the influence of the phenomenological parameters taken into account on the modulation bandwidth. We show theoretically that the leakage current increases the low frequency parasitic-like roll-off effect and degrades the differential gain. Results from modulation measurements of a 5 QW AlInGaAs/InP structure are presented. The measurements are fitted with the theoretical model evaluation and the modulation response figures of merit are deduced. The modulation bandwidth limitation mechanisms are related to the extracted parameters and explained by means of carrier transport effects. Simulation results are used in order to assess the carrier capture/escape time ratio influence and leakage current influence on the modulation response.
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Mircea Guina, Mihail M. Dumitrescu, and Ovidiu D. Iancu "MQW laser dynamic behavior analysis based on small signal modulation regime simulation", Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); https://doi.org/10.1117/12.378732
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