23 February 2000 Resonant cavity light-emitting diodes: modeling, design, and optimization
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Proceedings Volume 4068, SIOEL '99: Sixth Symposium on Optoelectronics; (2000) https://doi.org/10.1117/12.378731
Event: SIOEL: Sixth Symposium of Optoelectronics, 1999, Bucharest, Romania
Monolithic top emitting resonant cavity light-emitting diodes operating in the 650 and 880 nm ranges have been prepared using solid-source molecular beam epitaxy growth. Transfer matrix based modeling together with a self- consistent model have been sued to optimize the devices' performances. The design of the layer structure and doping profile was assisted by computer simulations that enabled many device improvements. Among the most significant ones intermediate-composition barrier-reduction layers were introduced in the DBR mirrors for improving the I-V characteristics and the cavity and mirrors were detuned aiming at maximum extraction efficiency. The fabricated devices showed line widths below 15 nm, CW light power output of 8 and 22.5 mW, and external quantum efficiencies of 3 percent and 14.1 percent in the 650 nm and 880 nm ranges, respectively - while the simulations indicate significant performance improvement possibilities.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mihail M. Dumitrescu, Mihail M. Dumitrescu, Pekko Sipila, Pekko Sipila, Ville Vilokkinen, Ville Vilokkinen, L. Toikkanen, L. Toikkanen, Petri Melanen, Petri Melanen, Mika J. Saarinen, Mika J. Saarinen, Seppo Orsila, Seppo Orsila, Pekka Savolainen, Pekka Savolainen, Mika Toivonen, Mika Toivonen, Markus Pessa, Markus Pessa, } "Resonant cavity light-emitting diodes: modeling, design, and optimization", Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); doi: 10.1117/12.378731; https://doi.org/10.1117/12.378731

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