23 February 2000 Simple method for characterizing the up-conversion processes governing 3-μm generation in concentrated erbium crystals
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Proceedings Volume 4068, SIOEL '99: Sixth Symposium on Optoelectronics; (2000) https://doi.org/10.1117/12.378683
Event: SIOEL: Sixth Symposium of Optoelectronics, 1999, Bucharest, Romania
Abstract
A simple method that allows the determination of the rates of the two-ion up-conversion processes governing 3-micrometers laser emission in concentrated erbium systems is presented. The method is based on the analysis of the kinetics of the 4I11/2 level, excited with short 532 nm laser pulses, for various pulse intensities.
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Serban Georgescu, Serban Georgescu, Claudiu Hapenciuc, Claudiu Hapenciuc, } "Simple method for characterizing the up-conversion processes governing 3-μm generation in concentrated erbium crystals", Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); doi: 10.1117/12.378683; https://doi.org/10.1117/12.378683
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