23 February 2000 Tunable laser diode sources for 830-nm and 980-nm wavelength range
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Proceedings Volume 4068, SIOEL '99: Sixth Symposium on Optoelectronics; (2000) https://doi.org/10.1117/12.378688
Event: SIOEL: Sixth Symposium of Optoelectronics, 1999, Bucharest, Romania
This paper describes the fabrication technique and operating characteristics of cleaved-coupled cavity (C3) tunable source with central emissions wavelength 835 nm and 980 nm. The C3 concept is realized using gain-guided AlGaAs/GaAs single quantum well and ridge-waveguide InGaAs/AlGaAs/GaAs multiquantum well heterostructures. The tunable wavelength range for these devices was 10 nm and 16 nm respectively. The coupled cavity was formed by cleaving the laser diode chips in two parts. The cleaved sections held together by the contact metals, were then indium soldered p-side up to a copper heat sink for CW operation. The sections length of the 980 nm C3 laser was 320 micrometers and 440 micrometers and 240 micrometers , 260 micrometers for 835 nm device. The emission spectra of 835 nm and 980 nm C3 laser diodes are presented.
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Grigore I. Suruceanu, Grigore I. Suruceanu, } "Tunable laser diode sources for 830-nm and 980-nm wavelength range", Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); doi: 10.1117/12.378688; https://doi.org/10.1117/12.378688

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