18 February 2000 Effect of the external electric field on hyper-Raman scattering from metal-semiconductor ohmic contact
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Proceedings Volume 4069, Raman Scattering; (2000) https://doi.org/10.1117/12.378124
Event: Raman Scattering, 1998, Moscow, Russian Federation
Abstract
Hyper Raman Scattering (HRS) is considered as a convenient tool of studying the interface region of the metal- semiconductor contact. The effect of the band bending near the interface results sometimes in an accumulation of free carriers near the interface. The strong inhomogeneity is shown to induce local changes of the sign of the dielectric permittivity and in the consequent strong enhancement of the HRS intensity. The application of a bias potential is shown to govern the enhancement process.
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G. Benedek, G. Benedek, I. P. Ipatova, I. P. Ipatova, A. Yu. Maslov, A. Yu. Maslov, L. V. Udod, L. V. Udod, } "Effect of the external electric field on hyper-Raman scattering from metal-semiconductor ohmic contact", Proc. SPIE 4069, Raman Scattering, (18 February 2000); doi: 10.1117/12.378124; https://doi.org/10.1117/12.378124
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