Raman scattering and anti-Stokes luminescence in wide-gap semiconductors

Vladimir S. Gorelik; Alexandr L. Karuzskii; Yurii V. Klevkov; Alexander V. Kvit; Sergey A. Medvedev; Anatolii V. Perestoronin; Pavel P. Sverbil

doi:10.1117/12.378108

18 February 2000 Raman scattering and anti-Stokes luminescence in wide-gap semiconductors

Vladimir S. Gorelik, Alexandr L. Karuzskii, Yurii V. Klevkov, Alexander V. Kvit, Sergey A. Medvedev, Anatolii V. Perestoronin, Pavel P. Sverbil

Author Affiliations +

Proceedings Volume 4069, Raman Scattering; (2000) https://doi.org/10.1117/12.378108
Event: Raman Scattering, 1998, Moscow, Russian Federation

Abstract

Raman scattering and anti-Stokes photoluminescence spectra of the crystalline GaP, ZnSe and ZnTe are investigated at room and liquid helium temperatures. The increase of quality-factor of vibrational modes and sharpening of polariton band are found in the Raman spectrum at liquid- helium temperature in a frequency range, corresponding to the TO and LO vibrations. A tentative explanation of the observed anti-Stokes photoluminescence is given with a help of the deep-level state analysis of these materials. The low-temperature anti-Stokes photoluminescence is found to be a common property of the wide gap semiconductors and can probe the spatial distribution profiles of impurities in these crystals.

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Vladimir S. Gorelik, Alexandr L. Karuzskii, Yurii V. Klevkov, Alexander V. Kvit, Sergey A. Medvedev, Anatolii V. Perestoronin, and Pavel P. Sverbil "Raman scattering and anti-Stokes luminescence in wide-gap semiconductors", Proc. SPIE 4069, Raman Scattering, (18 February 2000); https://doi.org/10.1117/12.378108

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