18 February 2000 Resonant hyper-Raman scattering of light in semiconductor crystals: Froehlich exciton-lattice interaction
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Proceedings Volume 4069, Raman Scattering; (2000) https://doi.org/10.1117/12.378123
Event: Raman Scattering, 1998, Moscow, Russian Federation
Abstract
Theory of the resonant hyper-Raman scattering of light by the longitudinal optical phonons in semiconductors which include excitonic effects has been developed. The theory can be applied at double frequency of incident radiation below and above the band gap. The matrix elements corresponding to the transition between different exciton states are calculated analytically. The contributions of the discrete and continuous states to the hyper-Raman intensity are compared.
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Ludmila E. Semenova, Kirill A. Prokhorov, "Resonant hyper-Raman scattering of light in semiconductor crystals: Froehlich exciton-lattice interaction", Proc. SPIE 4069, Raman Scattering, (18 February 2000); doi: 10.1117/12.378123; https://doi.org/10.1117/12.378123
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