Correlation Between Deposition Parameters And Performance Of Sputtered Amorphous Silicon Solar Cells

T. D. Moustakas

doi:10.1117/12.935688

8 September 1983 Correlation Between Deposition Parameters And Performance Of Sputtered Amorphous Silicon Solar Cells

T. D. Moustakas

Proceedings Volume 0407, Photovoltaics for Solar Energy Applications II; (1983) https://doi.org/10.1117/12.935688
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

This paper describes correlations between deposition parameters and photovoltaic properties of intrinsic amorphous silicon films produced by RF sputtering. We present data showing strong dependence between photovoltaic properties and structural and compositional inhomogeneity of the films. Studies on films produced at different hydrogen concentrations show that the ones with larger optical gaps have better photovoltaic potential. Small concentration of dopant impurities in the intrinsic films has significant effect on their photovoltaic properties. These optimization studies lead to intrinsic material, which when incorporated in a P-I-N solar cell generates external currents up to 13 mA/cm² and open circuit voltages of between 0.85 to 0.95 volts.

Citation Download Citation

T. D. Moustakas "Correlation Between Deposition Parameters And Performance Of Sputtered Amorphous Silicon Solar Cells", Proc. SPIE 0407, Photovoltaics for Solar Energy Applications II, (8 September 1983); https://doi.org/10.1117/12.935688

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