25 February 2000 Effects of structural properties and electric field distribution on the laser-damage threshold of HfO2 thin films
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Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378183
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy
Abstract
The joint effect of structural properties and electric field distribution on the laser damage threshold of HfO2 thin films is investigated in this work. Hafnium dioxide thin films of different optical thicknesses and with different structural properties have been realized employing two different deposition techniques: ion-assisted electron beam evaporation and dual-ion-beam sputtering technique. Laser damage thresholds of the sample have been measured at 308 nm by the photoacoustic beam deflection technique. It will be shown that samples presenting lower packing densities and lower peak values of the electric field intensity have higher damage threshold.
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Maria Lucia Protopapa, Maria Lucia Protopapa, Marco Alvisi, Marco Alvisi, M. Di Giulio, M. Di Giulio, Ferdinando De Tomasi, Ferdinando De Tomasi, Maria Rita Perrone, Maria Rita Perrone, G. Torsello, G. Torsello, Antonio Valentini, Antonio Valentini, } "Effects of structural properties and electric field distribution on the laser-damage threshold of HfO2 thin films", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); doi: 10.1117/12.378183; https://doi.org/10.1117/12.378183
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