25 February 2000 Experimental results on silicon annealing by a long-pulse high-power XeCl laser system
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Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378178
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy
Abstract
The XeCl laser facility Hercules, delivering a maximum energy of 8 J in 160 ns FWHM, has been used to irradiate amorphous silicon films on glass substrate. We designed an optical homogenizer to reshape the large cross-section of the laser beam (10 X 5) cm2, in order to reach a fluence up to 0.5 J/cm2 area. The beam resulted spatially homogeneous within 10 percent. We obtained poly- silicon films with grain size ranging from 0.1 to 2 micrometers , depending on the laser energy density. These preliminary results show that the grain size is critically fluence- dependent when the so-called super-lateral-growth regime is approached, with a maximum slope of the grain size vs. energy density greater than 0.5 micrometers /(mJ/cm2).
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Daniele Murra, Daniele Murra, Sarah Bollanti, Sarah Bollanti, Francesca Bonfigli, Francesca Bonfigli, D. Della Sala, D. Della Sala, Paolo Di Lazzaro, Paolo Di Lazzaro, Tommaso Letardi, Tommaso Letardi, } "Experimental results on silicon annealing by a long-pulse high-power XeCl laser system", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); doi: 10.1117/12.378178; https://doi.org/10.1117/12.378178
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