25 February 2000 Indium and tin oxide multilayered thin films as gas sensors based on reactive pulsed laser deposition
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Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378177
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy
Pulsed laser ablation is a very interesting method to deposit thin films of several materials and compounds as oxides, nitrides, insulators, semi- and super-conductors. Indium and In Oxide polycrystalline thin films have been gown on silicon substrates by reactive pulsed laser deposition from two metallic targets of indium and Tin by a multilayered deposition, both in presence of oxygen, using a frequency doubled Nd:YAG laser. These In2O3, SnO2 thin films find valid application as antistatic coatings, transparent resistive heaters, electrical electrodes for flat panel display and electrochromic device.s A comparison has been performed, among Indium Oxide, Tin Oxide, and multilayers of Indium and Tin Oxides, to evaluate their use as gas sensor devices. The influence of the physical parameters such as the substrate temperature, the laser energy, and the oxygen pressure in the deposition chamber has been investigated. The plume has been monitored by fast photography. The characterization of the films has been performed by X-Ray Diffraction, showing a preferential orientation. A four-contact probe shows that our films exhibit an increase in resistivity when exposed to NO.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Veronica Marotta, Veronica Marotta, Stefano Orlando, Stefano Orlando, Giovanni P. Parisi, Giovanni P. Parisi, Anna Giardini-Guidoni, Anna Giardini-Guidoni, } "Indium and tin oxide multilayered thin films as gas sensors based on reactive pulsed laser deposition", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); doi: 10.1117/12.378177; https://doi.org/10.1117/12.378177


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