Translator Disclaimer
25 February 2000 Parametric studies of carbon nitride thin films deposited by reactive pulsed laser ablation
Author Affiliations +
Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378158
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy
Abstract
We report on parametric studies of CNx films deposited by excimer laser ablation of graphite targets in molecular nitrogen atmosphere as a function of gas pressure and laser fluence values. Substrates were Si single crystals at room temperature. Deposition rates decrease with increasing nitrogen pressure. The N/C atomic ratio generally increases with increasing nitrogen pressure and laser fluence, N atoms are mainly bonded to C atoms in the sp2 and sp3 bonding states. At relatively high pressure and laser fluences about 40 percent of the C atoms and about 50 percent of the N atoms are bounded in the C-N single bonds, generally attributed to the (beta) -C3N4 compound.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Acquaviva, Emilia D'Anna, M. L. De Giorgi, Gilberto Leggieri, Armando Luches, Maurizio Martino, Alessio Perrone, A. Zocco, G. Barucca, and Paolo Mengucci "Parametric studies of carbon nitride thin films deposited by reactive pulsed laser ablation", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378158
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top