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25 February 2000 Plasma-assisted pulsed laser deposition of titanium dioxide
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Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378185
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy
Abstract
TiO2 film deposition by PAPLD with biased substrates is investigated into a wide range of laser fluence and oxygen pressure. It is established that plasma of the r.f. discharge excited inside PLD chamber strongly affects the films properties. TiO2 films deposited by PAPLD were found better than those produced by the conventional PLD with regard to their morphology, optical properties, and uniformity. So, at the high values of Knudsen number (lambda) /L < 1 with an r.f. power of 70 Watt, PAPLD markedly improves the TiO2 film stoichiometry for high laser fluence, and the deposition rate increases with it up to 2 A/s.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. A. Shakhatov, Alessandro De Giacomo, V. D'Onghia, Aurora M. Losacco, Giuseppe Chita, Giovanni Bruno, and Olga De Pascale "Plasma-assisted pulsed laser deposition of titanium dioxide", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378185
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