Translator Disclaimer
25 February 2000 Synthesis of metal-nitride films by pulsed laser deposition methods
Author Affiliations +
Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000)
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy
Pulsed laser deposition method (PLD) is widely used nowadays to produce smooth, homogeneous thin films on solid surfaces for microelectronic's purpose. Different metal-nitride films as well as nitrides of W, V, Ta, Ni, Co, Pb have been produced in NH3 and N2 atmosphere of a few on Si surfaces with orientation. In the reaction chamber the pulses of excimer laser at fluence of 5.8 J/cm2 were directed at angle of incidence of 45 degrees to the metallic sheet placed at distance 4.0 cm to the Si substrate. The metallic target was rotated at approximately 3 Hz. Different surface analyzing methods revealed that smooth, homogeneous thin films of the thickness of 20-100 nm were grown on the substrate surface. The chemical composition of the layers varied of metal-silicides to metal-nitrides. In some cases the appearance of carbon and oxygen consisting mixtures such as VNCO, N13Si9O1.5C6 and WN were observed. The film structures might be considered mostly amorphous according to the data of GR-XRD measurements.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Fabian, Laszlo Nanai, Maurizio Martino, Armando Luches, and Ion N. Mihailescu "Synthesis of metal-nitride films by pulsed laser deposition methods", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000);

Back to Top