1 September 2000 Electrically controlled optoelectronic Y-switch based on a BMFET device
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Proceedings Volume 4075, Micro-Opto-Electro-Mechanical Systems; (2000); doi: 10.1117/12.397937
Event: Symposium on Applied Photonics, 2000, Glasgow, United Kingdom
Abstract
We describe a new configuration for an optoelectronic router integrated in a silicon-on-silicon waveguide structure. The device is based on the mode-mixing principle together with the injection-induced phase shift. The structure is composed by a single mode input optical channel waveguide, a two-mode active region and an output Y branch to separate the two output channels. The active region is designed to allow a (pi) shift between the two modes that it supports, by means of a Bipolar Mode Field Effect Transistor, which injects and controls the free carrier plasma inside the active region. By doing so it is possible to steer light from one output channel to the other, when switching from the OFF state to the ON state. The numerical device simulator MEDICI has been used for evaluation of the electrical performances of the device, while different numerical analyses have been exploited to understand its optical behavior. These simulations show optical losses of about 3dB/cm, an overall crosstalk of -10.5 dB and a maximum switching frequency of about 200 MHz.
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Giuseppe Coppola, Andrea Irace, Giovanni Breglio, Antonello Cutolo, "Electrically controlled optoelectronic Y-switch based on a BMFET device", Proc. SPIE 4075, Micro-Opto-Electro-Mechanical Systems, (1 September 2000); doi: 10.1117/12.397937; https://doi.org/10.1117/12.397937
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KEYWORDS
Waveguides

Plasma

Switching

Phase shifts

Silicon

Dispersion

Optoelectronics

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