9 May 2000 Aluminum-induced lateral crystallization of amorphous silicon thin films
Author Affiliations +
Proceedings Volume 4077, International Conference on Sensors and Control Techniques (ICSC 2000); (2000) https://doi.org/10.1117/12.385531
Event: International Conference on Sensors and Control Techniques (ICSC2000), 2000, Wuhan, China
Abstract
A new process for low-temperature crystallization of amorphous Si (a-Si) films, metal-induced lateral crystallization (MILC), was developed. In our work, Al metal was adopted for the purpose of enhancing the crystallization of a-Si. The a-Si films right under the Al films were crystallized to the poly-Si films at the initial stage of annealing. These crystalline seeds were then grown laterally into Al-free area without further nucleation (lateral crystallization), thus obtaining large-grained poly-Si films with no metal contamination. The crystallinity was examined by Raman spectroscopy and X-ray diffraction. The results show that during MILC, the lowest temperature of Al induced lateral crystallization is about 300 degree(s)C and the crystallinity was enhanced while the temperature increased. This low temperature contamination-free lateral crystallization phenomenon may be applicable to the low temperature fabrication of poly-Si TFTs on the glass substrates.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rui Rao, Rui Rao, Zhongyang Xu, Zhongyang Xu, Xuecheng Zou, Xuecheng Zou, Guocai Sun, Guocai Sun, } "Aluminum-induced lateral crystallization of amorphous silicon thin films", Proc. SPIE 4077, International Conference on Sensors and Control Techniques (ICSC 2000), (9 May 2000); doi: 10.1117/12.385531; https://doi.org/10.1117/12.385531
PROCEEDINGS
3 PAGES


SHARE
Back to Top