9 May 2000 Effects of Bi4Ti3O12 doping on the electrical properties of low breakdown voltage ZnO varistors
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Proceedings Volume 4077, International Conference on Sensors and Control Techniques (ICSC 2000); (2000) https://doi.org/10.1117/12.385524
Event: International Conference on Sensors and Control Techniques (ICSC2000), 2000, Wuhan, China
Abstract
The regularity of the effect of Bi4Ti3O12-doped on the electrical properties of low voltage ZnO varistor was studied. The effects of annealing temperature on the electric characteristics of samples were discussed and the mechanism of Bi4Ti3O12-doped was analyzed. It is found that the electric properties of Bi4Ti3O12- doped samples are better than Bi2O3- and TiO2- doped samples, and the samples of Bi4Ti3O12- doped can overcome the weakness of Bi2O3 volatilization at high temperature. For 0.5mol% Bi4Ti3O12-doped samples sintered at 1280 degree(s)C for 2h, the electric properties were that V1mA equals 45v, (alpha) > 32, IL < 3 (mu) A.
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Tianjin Zhang, Xiangrong Yang, "Effects of Bi4Ti3O12 doping on the electrical properties of low breakdown voltage ZnO varistors", Proc. SPIE 4077, International Conference on Sensors and Control Techniques (ICSC 2000), (9 May 2000); doi: 10.1117/12.385524; https://doi.org/10.1117/12.385524
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