9 May 2000 Effects of Bi4Ti3O12 doping on the electrical properties of low breakdown voltage ZnO varistors
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Proceedings Volume 4077, International Conference on Sensors and Control Techniques (ICSC 2000); (2000) https://doi.org/10.1117/12.385524
Event: International Conference on Sensors and Control Techniques (ICSC2000), 2000, Wuhan, China
Abstract
The regularity of the effect of Bi4Ti3O12-doped on the electrical properties of low voltage ZnO varistor was studied. The effects of annealing temperature on the electric characteristics of samples were discussed and the mechanism of Bi4Ti3O12-doped was analyzed. It is found that the electric properties of Bi4Ti3O12- doped samples are better than Bi2O3- and TiO2- doped samples, and the samples of Bi4Ti3O12- doped can overcome the weakness of Bi2O3 volatilization at high temperature. For 0.5mol% Bi4Ti3O12-doped samples sintered at 1280 degree(s)C for 2h, the electric properties were that V1mA equals 45v, (alpha) > 32, IL < 3 (mu) A.
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Tianjin Zhang, Tianjin Zhang, Xiangrong Yang, Xiangrong Yang, } "Effects of Bi4Ti3O12 doping on the electrical properties of low breakdown voltage ZnO varistors", Proc. SPIE 4077, International Conference on Sensors and Control Techniques (ICSC 2000), (9 May 2000); doi: 10.1117/12.385524; https://doi.org/10.1117/12.385524
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