11 July 2000 Characteristics of oxide-confined AlGaAs/GaAs resonant-cavity light-emitting diodes
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Abstract
Resonant-cavity light-emitting diodes (RCLEDs) are attractive light sources because of their applications in data communications, optical printing, display, and optical interconnects. Lower intensity LEDs with a modulation bandwidth of few hundred MHz are suitable for lower-speed optical fiber communications. In this work, we have made oxide-confied AlGaAs/GaAs RCLEDs for optical communication systems. The epitaxial layers of the RCLEDs were grown by MBE system on the N+-GaAs substrates. T he RCLED epitaxial layers mainly consisted of an n-type DBR (diffractive Bragg reflector), a p-type DBR, and an active region sandwiched between p- and n-type DBR's. The thickness of the optcal cabity is 1$lamda. Reflectance measurement of the RCLED expitaxial wafers showed that the resonance of the RCLED cavity were about 850 nm. The wet oxidation process, which defined the current conducting aperture, was done at 425 degree(s)C under nitrogen flow with steam. P-ohmic and n-ohmic contacts were then formed sequentially using electron beam evaporation and annealing. The optical power of the RCLED is measured as function of current and temperature. The beam pattern and the optical spectrum were also measured and analyzed.
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Hung-Pin D. Yang, Hung-Pin D. Yang, Cheng-Zu Wu, Cheng-Zu Wu, Mei-Li Wang, Mei-Li Wang, Wen-Chang Jiang, Wen-Chang Jiang, Sin-Jei Yu, Sin-Jei Yu, Chia-Pin Sung, Chia-Pin Sung, } "Characteristics of oxide-confined AlGaAs/GaAs resonant-cavity light-emitting diodes", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392138; https://doi.org/10.1117/12.392138
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