11 July 2000 GaAs-based long-wavelength traveling-wave photodetector
Author Affiliations +
Abstract
GaAs-based high-speed photodetectors attract lots of attention in the past twenty years due to their maturity in material growth and processing. However their wide bandgap characteristic (830nm) restricts their applications in fiber communication wavelength (1.3(mu) m~1.55(mu) m). Recently some research groups had demonstrated GaAs-based n-i-n, p-i-in waveguide type photodetectors operating at 1.55 (mu) m by taking advantage of the mid-gap defect absorption of low- temperature grown GaAs (LTF-GaAs). In this paper we propose and analyze different bandwidth-limited factors for LTG-GAAs based metal-semiconductor-metal traveling wave photodetector (MSM TWPD) for both long and short wavelength cases. According to our calculation results, MSM TWPDs release the bandwidth limitation bottleneck in previous n-i-n and p-i-n TWPD structures, especially in the long wavelength case. Our analysis indicates that Lt-GaAs based traveling-wave photodetectors can offer excellent bandwidth as well as high saturation power performances in fiber communication wavelength, which corresponds to long absorption length regime.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
JinWei Shi, JinWei Shi, Chi-Kuang Sun, Chi-Kuang Sun, YingJay Yang, YingJay Yang, Yijen Chiu, Yijen Chiu, John Edward Bowers, John Edward Bowers, } "GaAs-based long-wavelength traveling-wave photodetector", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392187; https://doi.org/10.1117/12.392187
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Uniform Waveguide Leaky Wave Antennas
Proceedings of SPIE (October 23 1985)
Inverted Slot Line For Millimeter-Wave Optical Modulator
Proceedings of SPIE (November 17 1989)
Scattering Of Plane Wave By Microstrip Lines
Proceedings of SPIE (November 17 1989)

Back to Top