11 July 2000 High efficiency tunneling-regenerated multi-active region light-emitting diodes
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Abstract
A new mechanism of tunneling-regenerated multi-active region LEDs with high quantum efficiency and high brightness has been presented. The layer structure, MOCVD growth, device technology, a several of measured curves and their analysis of these new mechanism LEDs were shown in the paper. It was theoretically and experimentally resulted in that efficiency of the electro-luminescence and the on-axis luminous intensity can linearly increase approximately with the number of active regions.
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Xia Guo, Guangdi Shen, Guohong Wang, Jinyu Du, WeiLing Guo, Guo Gao, Wenjun Zhu, Deshu Zou, "High efficiency tunneling-regenerated multi-active region light-emitting diodes", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392139; https://doi.org/10.1117/12.392139
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