11 July 2000 High efficiency tunneling-regenerated multi-active region light-emitting diodes
Author Affiliations +
A new mechanism of tunneling-regenerated multi-active region LEDs with high quantum efficiency and high brightness has been presented. The layer structure, MOCVD growth, device technology, a several of measured curves and their analysis of these new mechanism LEDs were shown in the paper. It was theoretically and experimentally resulted in that efficiency of the electro-luminescence and the on-axis luminous intensity can linearly increase approximately with the number of active regions.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xia Guo, Xia Guo, Guangdi Shen, Guangdi Shen, Guohong Wang, Guohong Wang, Jinyu Du, Jinyu Du, WeiLing Guo, WeiLing Guo, Guo Gao, Guo Gao, Wenjun Zhu, Wenjun Zhu, Deshu Zou, Deshu Zou, } "High efficiency tunneling-regenerated multi-active region light-emitting diodes", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392139; https://doi.org/10.1117/12.392139

Back to Top