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11 July 2000 Low-threshold current densities of 1.5-μm wavelength (110) GaInAs(P) QW lasers along [001] direction
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(110)-oriented GaInAs(P) quantum well lasers along [001] direction have been fabricated to investigate growth direction effects of the QW structure on laser performance. The structures were grown by two methods; MOVPE and MOMBE. Threshold current densities of the QW lasers were investigated for wide stripes aligned in the [001] and [110] directions from the same wafer. As there is no cleaved facets for lasers along [001] direction, the mirror facets were formed parallel to the (001) face by reactive-ion- etching (RIE) using Bbr3 gas. Strong in-lane anisotropic lasing characteristics in the lasers made of the (110)- oriented QW structures were observed between the [001] and [110]cavity directions. This strong anisotrophy in Jth is believed to come from the stronger oscillator strength in the [001] direction. Fairly low threshold current densities of less than 0.6 KA/cm2 were obtained for the lasers with cavities along [001] direction in spite of the lower reflectivity of the RIE-etched mirror surface. The result in this research shows the expected advantage of the (110) lasers along the [001] cavity direction and suggests an advantage of the (110) QW structure in the application for long wavelength surface emitting lasers.
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Kunishige Oe, Rajaram J. Bhat, Mineo Ueki, and Manabu Mitsuhara "Low-threshold current densities of 1.5-μm wavelength (110) GaInAs(P) QW lasers along [001] direction", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000);


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