11 July 2000 Material growth investigation and high performance of InGaAs/InGaAsP/AlGaAs quantum well diode lasers (λ=0.98 μm)
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Abstract
In this work, we conduct a theoretical analysis of the design, fabrication, and performance measurement of high power and high brightness strained quantum well lasers emitting at 0.98 (mu) m. The material system of interest consists of an Al-free InGaAs/InGaAsP active region and AlGaAs cladding layers. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low threshold current density, high internal quantum efficiency, and extremely low internal loss. High performance broad-area multi-mode and ridge- waveguide single mode laser devices are fabricated. For 100 (mu) m-wide stripe lasers having a cavity length of 800 (mu) m, a high slope efficiency of 1.08 W/A, a low vertical beam divergence of 340, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW/(mu) m) demonstrates reliable performance. For 4 (mu) m-wide ridge waveguide single mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW/(mu) m are obtained.
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R. Jennifer Hwu, R. Jennifer Hwu, Guowen Yang, Guowen Yang, } "Material growth investigation and high performance of InGaAs/InGaAsP/AlGaAs quantum well diode lasers (λ=0.98 μm)", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392134; https://doi.org/10.1117/12.392134
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