11 July 2000 Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
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Abstract
The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue- shift revealing characteristic of donor-acceptable pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compound effects of differential DAP population and recombination rates and uneven acceptor distribution.
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ChenKe Shu, ChenKe Shu, WenHsiung Lee, WenHsiung Lee, YungChung Pan, YungChung Pan, HuaiYing Huang, HuaiYing Huang, HsiaoHui Chen, HsiaoHui Chen, WenHsiung Chen, WenHsiung Chen, WeiKuo Chen, WeiKuo Chen, MingChih Lee, MingChih Lee, } "Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392182; https://doi.org/10.1117/12.392182
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