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11 July 2000 Nearly single-mode high-density two-dimensional vertical-cavity surface-emitting laser arrays for optical communications
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Abstract
We have made AlGaAs/GaAs gain-guided two-dimensional (8x8 and 4x4) vertical-cavity surface-emitting laser array in the 850-nm rage for optical communication applications. Higher optical power with nearly single transverse mode output can be achieved by using high-density two-dimensional VCSEL arrays with smaller emitting element windows (<EQ 5(mu) m). The distributed Bragg reflectors (DBRs) of the VCSELs consist of A10.12Ga0.88As/AlAs quarter-wave stacks. The GRINSCH active region is consisted of an undoped three- quantum well GaAs/Al0.3Ga0.7As and two undoped linearly graded AlxGa1-xAs confinement layers. The emitting windows of the individual VCSEL elements are 5 (mu) mx4 (mu) m. A high cw optical power of 15.3 mW was measured for a 8x8 array, with a maximum pulsed optical power of 28 mW at 160 mA. The spectrum of the VCSEL array showed single transverse mode characteristics. The near-field characteristics of the arrays were measured. Almost all the VCSEL elements emitted TEM00 mode. The modulation characteristics of the VCSEL arrays were also measured at different operating current.
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Hung-Pin D. Yang, Mei-Li Wang, Wen-Chang Jiang, Yeung-Sy Su, and Chia-Pin Sung "Nearly single-mode high-density two-dimensional vertical-cavity surface-emitting laser arrays for optical communications", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392194
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