11 July 2000 New concept technology: pressure-variation liquid phase epitaxy
Author Affiliations +
Abstract
Liquid phase epitaxy (LPE) is an important technique to grow GaSb-based materials of good crystal quality. Normally, one has to lower the growth temperature below the liquid-phase liquidus temperature to realize supercooling of the liquid phase. Here we bring forth a new type of LPE, pressure- variation LPE (PV-LPE), where a varying pressure is used to realize supercooling of the liquid phase even though the growth temperature is kept constant. Calculations show that there exists a simple relationship between the liquid content and pressure, which theoretically illustrates that crystal growth could be easily controlled by changing the pressure.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
XiangJun Mao, XiangJun Mao, Yuen Chuen Chan, Yuen Chuen Chan, Yee Loy Lam, Yee Loy Lam, JingYi Zhu, JingYi Zhu, YunXi Shi, YunXi Shi, } "New concept technology: pressure-variation liquid phase epitaxy", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392141; https://doi.org/10.1117/12.392141
PROCEEDINGS
12 PAGES


SHARE
Back to Top