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11 July 2000 New concept technology: pressure-variation liquid phase epitaxy
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Abstract
Liquid phase epitaxy (LPE) is an important technique to grow GaSb-based materials of good crystal quality. Normally, one has to lower the growth temperature below the liquid-phase liquidus temperature to realize supercooling of the liquid phase. Here we bring forth a new type of LPE, pressure- variation LPE (PV-LPE), where a varying pressure is used to realize supercooling of the liquid phase even though the growth temperature is kept constant. Calculations show that there exists a simple relationship between the liquid content and pressure, which theoretically illustrates that crystal growth could be easily controlled by changing the pressure.
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XiangJun Mao, Yuen Chuen Chan, Yee Loy Lam, JingYi Zhu, and YunXi Shi "New concept technology: pressure-variation liquid phase epitaxy", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392141
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