11 July 2000 New methods of defect-enhanced quantum well intermixing and demonstrated integrated distributed-feedback laser modulator
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Abstract
New methods of implementing quantum well intermixing (QWI) in InP-based materials using defect-enhanced diffusion are presented and compared to the widely reported technique employing dielectric (usuall SiO2) capping with subsequent rapid thermal anneal (RTA) treatments. The new methods discussed use InP layers grown either at low temperature by gas-source molecular beam epitaxy (GSMBE) or using He-plasma-assisted GSMBE where growth surface is subjected to a continuous low energy He-plasma generated in an electron cyclotron resonance (ECR) source. The two new QWI processes, and the SiO2 capping method, are applied to a 1.55(mu) m InGaAsP multiple quantum well laser structure. For application of the QWI process the laser structure growths are interrupted in a manner and location appropriate to carrying out the QWI process and subsequent grating etch for the fabrication of a distributed feedback (DFB) laser. After implementing the QWI and grating etch, growth on the top cladding and contact layers completes the device structure. Finally, the fabrication of a DFB laser with an integrated electro-absorption (EA) modulator is described and the resultant characteristics given.
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David A. Thompson, John F. Hazell, Alex Siew-Wan Lee, Tao Yin, Gregory J. Letal, Brad J. Robinson, Nicholas Bertsch, John G. Simmons, "New methods of defect-enhanced quantum well intermixing and demonstrated integrated distributed-feedback laser modulator", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392137; https://doi.org/10.1117/12.392137
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