11 July 2000 Optical pumping spectra for InxGa1-xN/GaN multiple-quantum-well structures with indium content x>0.35
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Abstract
Photoluminescence (PL) measurement and optical pumping at 25K were studied for high-indium-composition InGaN/GaN multiple quantum well (MQW) structures grown by low-pressure metalorganic chemical vapor deposition. The result show that thermal annealing can reduce the compositional fluctuation of indium content. The optical pumping spectra show 5 stimulated emission (SE) peaks. This phenomenon might be attributed to intersubband transition. The transition between quantized levels for each peak was precisely identified by solving the time-independent Schrodinger equation and finite-difference method. The ratio of conduction- band discontinuities to the valence-band discontinuities of InGaN/GaN QW, (delta) Ec:(delta) Ev=38:62, can be obtained.
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Chii-Chang Chen, HuiWen Chuang, GouChung Chi, ChangCheng Chuo, Jen-Inn Chyi, "Optical pumping spectra for InxGa1-xN/GaN multiple-quantum-well structures with indium content x>0.35", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392168; https://doi.org/10.1117/12.392168
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