11 July 2000 Percolation and ripening in Si1-xGex/Si(001) islands: effect of misfit strain
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Abstract
We study the island size distributions of Xi1-xGex/Si(001) (x equals 0.4 - .07) islands of varying Ge fractions and thicknesses by ultrahigh vacuum chemical vapor deposition. The island size distributions of the percolating islands obey a dynamic scaling hypothesis admitting only one length scale governing the growth, in the limit of large island sizes. Although bimodal distributions are found in coherent islands at large misfit strain, due to the large stress concentration at island perimeters; faulted dislocation loops forming as islands grow remove this stress concentration. This re-establishes a unimodal distribution,, reclaiming the scaling hypothesis. We show that the misfit strain is renormalized and, thus, is not essential in determining the size distribution. We also demonstrate evidence for Smoluchowski ripening mechanism occuring during growth. Finally, we discuss implications of these issues on achieving a uniform Xi1-xGex/Si(001) island distribution, which is crucial for technological applications.
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R. Arief Budiman, Harry E. Ruda, D. D. Perovic, B. Bahierathan, "Percolation and ripening in Si1-xGex/Si(001) islands: effect of misfit strain", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392119; https://doi.org/10.1117/12.392119
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