11 July 2000 Picosecond imaging of hot electron emission from CMOS circuitry
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Abstract
This paper describes the spatially and temporally resolved images from submicron NFETS and a CMOS ring-oscillator circuit. The spatial and temporal information is supplemented by spectral measurements obtained using a set of optical band-pass filters. The intensity of luminescence has been observed on individual transistors with gate-length downs to 0.2 microns. The time-resolution of ~ 100 ps is sufficient to observe the response of individual invertors for gate lengths of 0.8 microns and even lower. Preliminary work on spectral distributions on emission from both the ring oscillator and NFET indicated a peak around 850nm. This may be limited on the long-wavelength side by the response of the photomultiplier photocathode, indicating that better sensitivity could be achieved with extended infra-red sensitivity. The spectral distribution is explained with reference to current theories.
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Kartik Ramanujachar, Dolf Landheer, Sylvain Raymond, N. Sylvain Charbonneau, Peter T. Coleridge, Tahui Wang, "Picosecond imaging of hot electron emission from CMOS circuitry", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392155; https://doi.org/10.1117/12.392155
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