11 July 2000 Radiation damage and surface modification of InSb(111) by MeV C+ and C2+ ions
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Abstract
The damage accumulation at the surface as well as deeper regions in InSb bombarded with MeV C+ and C2+ ions have been studied. Mirror polished (111)-oriented InSb single crystal substrates were implanted wiht 1.00 MeV C+ and 2.00 MeV C2+ ions to a total fluence of 5x104 C-atoms/cm2 at room temperature. The retained damage following implantation was analyzed by Rutherford backscattering/channeling technique and Raman scattering experiment. Fourier Transform Infrared Spectroscopy (FTIR) have been used to study the dielectric behavior, optical as well as transport properties of the implanted specimens. The FTIR spectra were analyzed within the framework of a dielectric response model. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results show that the response of InSb crystal to C+ ion bombardment is widely different when compared to that of C2+ implantation. A tentative explanation for the results have been presented.
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Goutam Kuri, Goutam Kuri, Tzuen Rong Yang, Tzuen Rong Yang, "Radiation damage and surface modification of InSb(111) by MeV C+ and C2+ ions", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392106; https://doi.org/10.1117/12.392106
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