11 July 2000 Stress distributions in patterned-substrate InGaAs/InP
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Abstract
Under appropriate conditions, the growth of InGaAs/InP on patterned InP substrates leads to the development of atomically smooth triangular structures with [111]B sidewalls and embedded in InGaAs quantum wells. Using finite element methods, we examine how the stress distribution arising from embedded compressive and tensile quantum well influences the subsequent growth of self-assembled InAs quantum dots on the sidewalls. By calculating the total strain energy of the structure we show that the InAs dots would locate preferentially along the sidewall near the location of a comprehensive quantum well and away from a tensile quantum well. We also show that the size distribution can be narrowed in a three-layer structure that consists of one compressive quantum well sandwiched between two tensile quantum wells.
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Jacques Lefebvre, Jacques Lefebvre, Geof C. Aers, Geof C. Aers, Philip J. Poole, Philip J. Poole, Robin L. Williams, Robin L. Williams, } "Stress distributions in patterned-substrate InGaAs/InP", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392201; https://doi.org/10.1117/12.392201
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